STB24N65M2 Datasheet, PDF (4/20 Pages) STMicroelectronics – Extremely low gate charge

Electrical characteristics
STB24N65M2, STF24N65M2, STP24N65M2
2
Electrical characteristics
(TC = 25 °C unless otherwise specified)
Symbol
Parameter
Table 5: On /off states
Test conditions
V(BR)DSS
IDSS
IGSS
VGS(th)
RDS(on)
Drain-source breakdown voltage
Zero gate voltage
drain current (VGS = 0)
Gate-body leakage
current (VDS = 0)
Gate threshold voltage
Static drain-source
on-resistance
ID = 1 mA, VGS = 0
VDS = 650 V
VDS = 650 V, TC=125 °C
VGS = ± 25 V
VDS = VGS, ID = 250 µA
VGS = 10 V, ID = 8 A
Min.
650
2
Typ.
3
0.185
Max.
1
100
±10
4
0.23
Unit
V
µA
µA
µA
V
Ω
Symbol
Ciss
Coss
Crss
C oss eq.⁽¹⁾
RG
Qg
Qgs
Qgd
Parameter
Table 6: Dynamic
Test conditions
Input capacitance
Output capacitance
Reverse transfer capacitance
VDS = 100 V, f = 1 MHz,
VGS = 0
Equivalent output capacitance
Intrinsic gate resistance
Total gate charge
Gate-source charge
Gate-drain charge
VDS = 0 to 520 V, VGS = 0
f = 1 MHz, ID = 0
VDD = 520 V, ID = 16 A,
VGS = 10 V
Min.
-
-
-
-
-
-
-
-
Typ.
1060
47.5
1.65
229
7
29
3.8
14
Max.
-
-
-
-
-
-
-
-
Unit
pF
pF
pF
pF
Ω
nC
nC
nC
Notes:
(1) _{C oss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS}
increases from 0 to 80% VDSS
Symbol
td(on)
tr
td(off)
tf
Parameter
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Table 7: Switching times
Test conditions
VDD = 325 V, ID = 8 A,
RG = 4.7 Ω, VGS = 10 V
Min. Typ. Max. Unit
-
10
-
ns
-
9.5
-
ns
-
68
-
ns
-
25.5
-
ns
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DocID026475 Rev 2