STB18NF30 Datasheet, PDF (7/15 Pages) STMicroelectronics – Automotive-grade N-channel 330 V, 160 m typ., 18 A STripFET II Power MOSFET in a DPAK package

STB18NF30
Electrical characteristics
Figure 8. Gate charge vs gate-source voltage Figure 9. Capacitance variations
VGS
(V)
12
VDS
10
VDD=264V
ID=18A
AM12978v1
VDS
(V)
250
200
C
(pF)
1000
8
150
100
6
100
4
10
2
50
0
0
0 10 20 30 40 50 Qg(nC)
1
0.1 1
10 100 1000
AM12979v1
Ciss
Coss
Crss
VDS(V)
Figure 10. Normalized gate threshold voltage Figure 11. Normalized on-resistance vs
vs temperature
temperature
VGS(th)
(norm)
1.8
1.6
1.4
1.2
ID=250µA
AM12980v1
RDS(on)
(norm)
2.5
2.0
ID=9A
VGS=10V
AM12981v1
1.0
1.5
0.8
1.0
0.6
0.4
0.2
0
-100 -50 0 50 100 150 TJ(°C)
0.5
0
-100 -50 0 50 100 150 TJ(°C)
Figure 12. Source-drain diode forward
characteristics
VSD
(V)
AM12982v1
1.0
TJ=-50°C
0.8
TJ=25°C
0.6
0.4
0.2
0
0
TJ=175°C
5
10
15 ISD(A)
DocID018590 Rev 3
7/15
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