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| STB18NF30 Datasheet, PDF (1/15 Pages) STMicroelectronics – Automotive-grade N-channel 330 V, 160 m typ., 18 A STripFET II Power MOSFET in a DPAK package | |||
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STB18NF30
Automotive-grade N-channel 330 V, 160 mΩ typ., 18 A STripFET⢠II
Power MOSFET in a D²PAK package
Datasheet - production data
Features
TAB
3
1
D²PAK
Figure 1. Internal schematic diagram
' RU7$%
*
6
Order code
STB18NF30
VDSS
330 V
RDS(on) max.
180 mΩ
ID
18 A
⢠Designed for automotive applications and
AEC-Q101 qualified
⢠100% avalanche tested
⢠175 °C junction temperature
Applications
⢠Switching applications
Description
This Power MOSFET has been developed using
STMicroelectronicsâ unique STripFET process,
which is specifically designed to minimize input
capacitance and gate charge. This renders the
device suitable for use as primary switch in
advanced high-efficiency isolated DC-DC
converters for telecom and computer
applications, and applications with low gate
charge driving requirements.
$0Y
Order code
STB18NF30
Table 1. Device summary
Marking
Package
18NF30
D²PAK
Packaging
Tape and reel
August 2013
This is information on a product in full production.
DocID018590 Rev 3
1/15
www.st.com
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