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STB18NF30 Datasheet, PDF (4/15 Pages) STMicroelectronics – Automotive-grade N-channel 330 V, 160 m typ., 18 A STripFET II Power MOSFET in a DPAK package
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Electrical characteristics
2
Electrical characteristics
(TCASE=25 °C unless otherwise specified).
Symbol
Parameter
Table 5. On/off states
Test conditions
V(BR)DSS
Drain-source breakdown
voltage
ID=1 mA, VGS=0
IDSS
Zero gate voltage drain
current (VGS = 0)
IGSS
VGS(th)
RDS(on)
Gate body leakage current
(VDS = 0)
Gate threshold voltage
Static drain-source
on-resistance
VDS=330 V
VDS=330 V,Tc=125 °C
VGS=±20 V
VDS=VGS, ID= 250 µA
VGS=10 V, ID=9 A
STB18NF30
Min. Typ. Max. Unit
330 -
-
V
1 µA
50 µA
- ±100 nA
2
-
4
V
160 180 mΩ
Symbol
Parameter
Ciss
Coss
Crss
Qg
Qgs
Qgd
Input capacitance
Output capacitance
Reverse transfer
capacitance
Total gate charge
Gate-source charge
Gate-drain charge
Table 6. Dynamic
Test conditions
VDS=25 V, f=1 MHz,
VGS=0 V
VDD=264 V, ID=18 A,
VGS=10 V
(see Figure 14)
Min. Typ. Max. Unit
- 1650 -
pF
- 220
pF
- 30
pF
-
44
-
nC
-
7
-
nC
-
17
-
nC
Symbol
Parameter
td(on)
tr
td(off)
tf
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Table 7. Switching times
Test conditions
VDD=165 V, ID= 9 A,
RG= 4.70 Ω, VGS=10 V
(see Figure 13)
Min. Typ. Max. Unit
-
20
- ns
-
18
- ns
- 145 - ns
-
45
- ns
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