STB18NF30 Datasheet, PDF (5/15 Pages) STMicroelectronics – Automotive-grade N-channel 330 V, 160 m typ., 18 A STripFET II Power MOSFET in a DPAK package

STB18NF30
Electrical characteristics
Table 8. Source drain diode
Symbol
Parameter
Test conditions
I_SD
I_SDM
V_SD
t_rr
Q_rr
I_RRM
t_rr
Q_rr
I_RRM
Source-drain current
Source-drain current
(pulsed)
Forward on voltage
Reverse recovery time
Reverse recovery charge
Reverse recovery current
Reverse recovery time
Reverse recovery charge
Reverse recovery current
I_SD=18 A, V_GS=0 V
I_SD=18 A, di/dt=100 A/µs,
V_DD=100 V
(see Figure 15)
I_SD=18 A, di/dt=100 A/µs,
V_DD=100 V, Tj=150 °C
(see Figure 15)
Min. Typ. Max. Unit
-
18 A
-
72 A
-
1.5 V
- 180 400 ns
- 1.5
µC
-
16
A
- 210
ns
- 1.9
µC
-
19
A
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