STB18NF30 Datasheet, PDF (3/15 Pages) STMicroelectronics – Automotive-grade N-channel 330 V, 160 m typ., 18 A STripFET II Power MOSFET in a DPAK package

STB18NF30
1
Electrical ratings
Electrical ratings
Table 2. Absolute maximum ratings
Symbol
Parameter
Value
V_DS
V_GS
I_D(1)
I_DM(2)
P_TOT
dv/dt⁽³⁾
Drain-source voltage
Gate-source voltage
Drain current (continuous) at T_C = 25 °C
Drain current (continuous) at T_C = 100 °C
Drain current (pulsed)
Total dissipation at T_C = 25 °C
Peak diode recovery voltage slope
T_stg
Storage temperature
T_J
Operating junction temperature
1. The value is rated according to R_thj-c.
2. Pulse is rated according to SOA.
3. I_SD ≤ 18 A, di/dt ≤ 200 A/µs, V_DD ≤ 80%V_(BR)DSS
330
±20
18
12
72
150
10
-55 to 175
Symbol
Table 3. Thermal data
Parameter
R_thj-case Thermal resistance junction-case
R_thj-pcb ⁽¹⁾ Thermal resistance junction-pcb
1. When mounted on 1 inch² FR-4, 2 Oz copper board.
Value
1
30
Symbol
I_AV
E_AS
Table 4. Avalanche data
Parameter
Non-repetitive avalanche current
Single pulse avalanche energy (starting
T_J=25 °C, I_D=I_AV, V_DD=50 V)
Value
14
200
Unit
V
V
A
A
A
W
V/ns
°C
Unit
°C/W
Unit
A
mJ
DocID018590 Rev 3
3/15
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