STD3N40K3 Datasheet, PDF (6/16 Pages) STMicroelectronics – Gate charge minimized

Electrical characteristics
STD3N40K3
2.1
Electrical characteristics (curves)
Figure 2.
ID
(A)
Safe operating area
Figure 3. Thermal impedance
AM12470v1
1
0.1
0.01
OpeLri^a_mtiiotendin^{bythmisaaxreRaDSis(on)}
Tj=150°C
Tc=25°C
Single pulse
10µs
100µs
1ms
10ms
0.001
0.1
1
10
100 VDS(V)
Figure 4. Output characteristics
Figure 5. Transfer characteristics
ID (A)
3.5
3.0
2.5
2.0
1.5
1.0
VGS=10V
AM09050v1
ID
(A)
7V
3
2.5
2
6V
1.5
1
VDS=15V
0.5
5V
0
0
5 10 15 20 25 VDS(V)
0.5
0
0
2
4
6
8
AM12473v1
VGS(V)
Figure 6. Gate charge vs gate-source voltage Figure 7. Static drain-source on-resistance
VGS
(V)
12
VDS
10
8
6
4
VDD=320V
ID=1.8A
AM08996v1
VGS
350
300
250
200
150
100
RDS(on)
(Ω)
3.8
3.6
3.4
3.2
3.0
VGS=10V
AM08997v1
2
50
2.8
0
0
0
24
6
8 10 Qg(nC)
2.6
0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 ID(A)
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Doc ID 023398 Rev 1