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STD3N40K3 Datasheet, PDF (4/16 Pages) STMicroelectronics – Gate charge minimized
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Electrical characteristics
2
Electrical characteristics
STD3N40K3
(TC = 25 °C unless otherwise specified)
Table 4. On /off states
Symbol
Parameter
Test conditions
V(BR)DSS
Drain-source
breakdown voltage
ID = 1 mA, VGS = 0
IDSS
IGSS
VGS(th)
RDS(on)
Zero gate voltage
VDS = 400 V
drain current (VGS = 0) VDS = 400 V, TC=125 °C
Gate-body leakage
current (VDS = 0)
VGS = ± 20 V, VDS=0
Gate threshold voltage VGS = VDS, ID = 50 µA
Static drain-source on-
resistance
VGS = 10 V, ID = 0.9 A
Min. Typ. Max. Unit
400
V
1 µA
50 µA
±10 µA
3 3.75 4.5 V
2.7 3.4 Ω
Table 5. Dynamic
Symbol
Parameter
Test conditions
Min. Typ. Max. Unit
Ciss
Coss
Crss
Input capacitance
Output capacitance
Reverse transfer
capacitance
VDS = 50 V, f = 1 MHz,
VGS = 0
165
pF
-
17
- pF
3
pF
Equivalent output
Coss(er)(1) capacitance energy
related
Equivalent output
Coss(tr)(2) capacitance time
related
VDS=0 to 320 V, VGS=0
-
9
- pF
-
14
- pF
Rg
Instrinsic gate
resistance
f=1 MHz open drain
-
10
-
Ω
Qg
Total gate charge
VDD = 320 V, ID = 1.8 A,
Qgs Gate-source charge VGS = 10 V
Qgd Gate-drain charge
(see Figure 16)
11
nC
-
2
- nC
7
nC
1. Is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS
increases from 0 to 80% VDSS
2. Is defined as a constant equivalent capacitance giving the same storage energy as Coss when VDS
increases from 0 to 80% VDSS
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Doc ID 023398 Rev 1
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