STD3N40K3 Datasheet, PDF (1/16 Pages) STMicroelectronics – Gate charge minimized

STD3N40K3
Features
N-channel 400 V, 2.7 Ω typ., 2 A SuperMESH3™
Zener-protected Power MOSFET in a DPAK package
Datasheet — production data
Order code V_DSS R_DS(on) max I_D
STD3N40K3 400 V < 3.4 Ω 2 A
Pw
30 W
■ 100% avalanche tested
■ Extremely high dv/dt capability
■ Gate charge minimized
■ Very low intrinsic capacitance
■ Improved diode reverse recovery
characteristics
■ Zener-protected
Applications
■ Switching applications
Description
This SuperMESH3™ Power MOSFET is the
result of improvements applied to
STMicroelectronics’ SuperMESH™ technology,
combined with a new optimized vertical structure.
This device boasts an extremely low on-
resistance, superior dynamic performance and
high avalanche capability, rendering it suitable for
the most demanding applications.
TAB
3
1
DPAK
Figure 1.
Internal schematic diagram
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AM01476v1
Table 1. Device summary
Order code
STD3N40K3
Marking
3N40K3
Package
DPAK
Packaging
Tape and reel
July 2012
This is information on a product in full production.
Doc ID 023398 Rev 1
1/16
www.st.com
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