STD155N3H6 Datasheet, PDF (6/18 Pages) STMicroelectronics – N-channel 30 V, 2.5 m , 80 A, D PAK, DPAK STripFET VI DeepGATE Power MOSFET

Electrical characteristics
STB155N3H6, STD155N3H6
2.1
Electrical characteristics (curves)
Figure 2.
ID
(A)
Safe operating area
Figure 3.
AM09149v1
Tj=175°C
Tc=25°C
Single pulse
Thermal impedance
100
100µs
1ms
10
10ms
1
0.1
1
10
VDS(V)
Figure 4. Output characteristics
ID
(A)
VGS=10V
250
Figure 5.
AM09150v1
ID
(A)
6V
250
Transfer characteristics
VDS=1V
AM09151v1
200
200
150
150
5V
100
100
50
0
4V
0
0.5
1.0
1.5 VDS(V)
50
0
0 1 2 3 4 5 6 VGS(V)
Figure 6.
BVDSS
(norm)
1.10
Normalized B_VDSS vs temperature Figure 7.
ID=1mA
AM09152v1
RDS(on)
(mΩ)
3.5
Static drain-source on resistance
AM09153v1
VGS=10V
1.05
3.0
1.00
2.5
0.95
2.0
0.90
1.5
0.85
0.80
-75 -25 25 75 125 175 TJ(°C)
1.0
0.5
0
20
40
60
80 ID(A)
6/
Doc ID 018793 Rev 2