STD155N3H6 Datasheet, PDF (1/18 Pages) STMicroelectronics – N-channel 30 V, 2.5 m , 80 A, D PAK, DPAK STripFET VI DeepGATE Power MOSFET

STB155N3H6
STD155N3H6
N-channel 30 V, 2.5 mΩ , 80 A, D²PAK, DPAK
STripFET™ VI DeepGATE™ Power MOSFET
Features
Order codes
STB155N3H6
STD155N3H6
V_DSS
30 V
30 V
R_DS(on) max
< 3 mΩ
< 3 mΩ
I_D
80 A ⁽¹⁾
80 A ⁽¹⁾
1. Limited by wire bonding
■ R_DS(on) * Q_g industry benchmark
■ Extremely low on-resistance R_DS(on)
■ High avalanche ruggedness
Application
■ Switching applications
■ Automotive
Description
These devices are 30 V N-channel Power
MOSFETs realized using ST`s proprietary
STripFET™ VI technology. The resulting Power
MOSFET exhibits the lowest R_DS(on) in all
packages.
3
1
DPAK
3
1
D²PAK
Figure 1. Internal schematic diagram
D (TAB or 2)
G(1)
Table 1. Device summary
Order codes
STB155N3H6
STD155N3H6
Marking
155N3H6
S(3)
AM01474v1
Package
D²PAK
DPAK
Packaging
Tape and reel
May 2011
Doc ID 018793 Rev 2
1/
www.st.com
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