STD155N3H6 Datasheet, PDF (5/18 Pages) STMicroelectronics – N-channel 30 V, 2.5 m , 80 A, D PAK, DPAK STripFET VI DeepGATE Power MOSFET

STB155N3H6, STD155N3H6
Electrical characteristics
Table 7. Switching on/off (inductive load)
Symbol
Parameter
Test conditions
Min. Typ. Max. Unit
t_d(on)
t_r
t_d(off)
t_f
Turn-on delay time
Rise time
Turn-off delay time
Fall time
20
V_DD = 15 V, I_D = 40 A,
-
90
R_G = 4.7 Ω, V_GS = 10 V
(see Figure 13)
50
-
20
ns
-
ns
ns
-
ns
Table 8.
Symbol
Source drain diode
Parameter
Test conditions
Min. Typ. Max. Unit
I_SD Source-drain current
I_SDM(1) Source-drain current (pulsed)
-
V_SD(2) Forward on voltage
I_SD = 80 A, V_GS = 0
-
t_rr
Q_rr
I_RRM
Reverse recovery time
Reverse recovery charge
Reverse recovery current
I_SD = 80 A,
di/dt = 100 A/µs,
-
V_DD = 24 V, T_J = 150 °C
(see Figure 15)
80 A
320 A
1.3 V
40
ns
50
nC
2.5
A
1. Pulse width limited by safe operating area
2. Pulsed: pulse duration = 300 µs, duty cycle 1.5%
Doc ID 018793 Rev 2
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