STD155N3H6 Datasheet, PDF (3/18 Pages) STMicroelectronics – N-channel 30 V, 2.5 m , 80 A, D PAK, DPAK STripFET VI DeepGATE Power MOSFET

STB155N3H6, STD155N3H6
1
Electrical ratings
Table 2. Absolute maximum ratings
Symbol
Parameter
V_DS
V_GS
I_D ⁽¹⁾
I_D
I_DM ⁽²⁾
P_TOT
Drain-source voltage (V_GS = 0)
Gate-source voltage
Drain current (continuous) at T_C = 25 °C
Drain current (continuous) at T_C = 100 °C
Drain current (pulsed)
Total dissipation at T_C = 25 °C
Derating factor
T_stg Storage temperature
T_j
Operating junction temperature
1. Limited by wire bonding
2. Pulse width limited by safe operating area
Table 3. Thermal resistance
Symbol
Parameter
R_thj-case Thermal resistance junction-case max
R_thj-pcb ⁽¹⁾ Thermal resistance junction-pcb max
1. When mounted on 1 inch² 2 oz Cu board
Table 4. Avalanche characteristics
Symbol
Parameters
I_AV Not-repetitive avalanche current
E_AS
Single pulse avalanche energy
(starting T_J = 25 °C, I_D = I_AV, V_DD = 22 V)
Electrical ratings
Value
30
± 20
80
80
320
110
0.73
-55 to 175
Unit
V
V
A
A
A
W
W/°C
°C
°C
Value
D²PAK DPAK
1.36
35
50
Unit
°C/W
°C/W
Value
Unit
40
A
525
mJ
Doc ID 018793 Rev 2
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