STD155N3H6 Datasheet, PDF (4/18 Pages) STMicroelectronics – N-channel 30 V, 2.5 m , 80 A, D PAK, DPAK STripFET VI DeepGATE Power MOSFET

Electrical characteristics
2
Electrical characteristics
STB155N3H6, STD155N3H6
(T_CASE = 25 °C unless otherwise specified)
Table 5. Static
Symbol
Parameter
V_(BR)DSS
Drain-source breakdown
Voltage
I_DSS
I_GSS
V_GS(th)
R_DS(on)
Zero gate voltage drain
current (V_GS = 0)
Gate body leakage current
(V_DS = 0)
Gate threshold voltage
Static drain-source on
resistance
Test conditions
I_D = 250 µA, V_GS= 0
V_DS = 20 V
V_DS = 20 V,Tc = 125 °C
V_GS = ± 20 V
V_DS = V_GS, I_D = 250 µA
V_GS = 10 V, I_D = 40 A
Min. Typ.
30
2
2.5
Max. Unit
V
1 µA
100 nA
±100 nA
4
V
3.0 mΩ
Table 6.
Symbol
Dynamic
Parameter
C_iss
C_oss
C_rss
Q_g
Q_gs
Q_gd
R_G
Input capacitance
Output capacitance
Reverse transfer
capacitance
Total gate charge
Gate-source charge
Gate-drain charge
Intrinsic gate resistance
Test conditions
V_DS = 25 V, f=1 MHz,
V_GS = 0
V_DD = 15 V, I_D = 80 A
V_GS = 10 V
Figure 14
f = 1 MHz open drain
Min Typ. Max. Unit
3650
pF
-
765
- pF
390
pF
62
nC
-
17
- nC
16
nC
-
1.5
-
Ω
4/
Doc ID 018793 Rev 2