STB27NM60ND Datasheet, PDF (6/19 Pages) STMicroelectronics – Low input capacitance and gate charge

Electrical characteristics
STB27NM60ND, STW27NM60ND
Table 7. Source drain diode
Symbol
Parameter
Test conditions
Min. Typ. Max. Unit
I_SD Source-drain current
-
I_SDM ⁽¹⁾ Source-drain current (pulsed)
-
V_SD ⁽²⁾ Forward on voltage
I_SD = 21 A, V_GS = 0
-
21 A
84 A
1.3 V
t_rr
Reverse recovery time
I_SD = 21 A, V_DD = 60 V
-
160
ns
Q_rr Reverse recovery charge
di/dt=100 A/µs
-
1
µC
I_RRM Reverse recovery current
(see Figure 18)
-
15
A
t_rr
Reverse recovery time
I_SD = 21 A,V_DD = 60 V
- 230
ns
Q_rr Reverse recovery charge
di/dt=100 A/µs,
T_J = 150 °C
-
2
µC
I_RRM Reverse recovery current
(see Figure 18)
-
19
A
1. Pulse width limited by safe operating area
2. Pulsed: Pulse duration = 300 µs, duty cycle 1.5%.
6/19
DocID15406 Rev 4