STB27NM60ND Datasheet, PDF (4/19 Pages) STMicroelectronics – Low input capacitance and gate charge

Electrical characteristics
2
Electrical characteristics
STB27NM60ND, STW27NM60ND
(T_CASE=25 °C unless otherwise specified).
Symbol
Parameter
Table 5. On/off states
Test conditions
Value
Unit
Min. Typ. Max.
Drain-source
V_{(BR)DSS breakdown voltage}
I_D = 1 mA, V_GS = 0
600
dv/dt⁽¹⁾
Drain source voltage slope
V_DD= 480 V, I_D= 21 A,
V_GS= 10 V
I_DSS
Zero gate voltage
drain current (V_GS = 0)
V_DS = 600 V
V_DS = 600 V @T_C= 125 °C
I_GSS
Gate-body leakage
current (V_DS = 0)
V_GS = ± 20 V
V_GS(th) Gate threshold voltage
V_DS = V_GS, I_D = 250 µA
3
R_DS(on) Static drain-source
on- resistance
V_GS = 10 V, I_D = 10.5 A
V
48
V/ns
1 µA
100 µA
±100 nA
4
5
V
0.13 0.16 Ω
1. Characteristic value at turn off on inductive load.
Table 6. Dynamic
Symbol
Parameter
Test conditions
g_fs ⁽¹⁾
C_iss
C_oss
C_rss
Forward transconductance
Input capacitance
Output capacitance
Reverse transfer
capacitance
V_DS = 15 V_, I_D = 10.5 A
V_DS = 50 V, f = 1 MHz,
V_GS = 0
C_oss
(2)
eq.
t_d(on)
t_r
t_d(off)
t_f
Equivalent output
capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
V_GS = 0, V_DS = 0 to 480 V
V_DD = 300 V, I_D = 10.5 A
R_G = 4.7 Ω V_GS = 10 V
(see Figure 21),
(see Figure 16)
Min. Typ. Max. Unit
-
17
-
S
- 2400 -
pF
-
150 -
pF
-
15
-
pF
-
320 -
pF
-
60
-
ns
-
30
-
ns
-
50
-
ns
-
40
-
ns
4/19
DocID15406 Rev 4