STB27NM60ND Datasheet, PDF (1/19 Pages) STMicroelectronics – Low input capacitance and gate charge

STB27NM60ND,
STW27NM60ND
Automotive-grade N-channel 600 V, 0.13 Ω, 21 A FDmesh™ II
Power MOSFETs (with fast diode) in D²PAK and TO-247 packages
Datasheet - production data
Features
TAB
3
1
D²PAK
TO-247
3
2
1
Figure 1. Internal schematic diagram
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3
!-V
Order codes V_DS@ T_jmax R_DS(on) max I_D
STB27NM60ND
STW27NM60ND
650 V
0.16 Ω 21 A
• Designed for automotive applications and
AEC-Q101 qualified
• The worldwide best R_DS(on)*area amongst the
fast recovery diode devices
• 100% avalanche tested
• Low input capacitance and gate charge
• Low gate input resistance
• Extremely high dv/dt and avalanche
capabilities
Applications
• Switching applications
Description
These FDmesh™ II Power MOSFETs with
intrinsic fast-recovery body diode are produced
using the second generation of MDmesh™
technology. Utilizing a new strip-layout vertical
structure, these revolutionary devices feature
extremely low on-resistance and superior
switching performance. They are ideal for bridge
topologies and ZVS phase-shift converters.
Order codes
STB27NM60ND
STW27NM60ND
Table 1. Device summary
Marking
Packages
27NM60ND
D²PAK
27NM60ND
TO-247
October 2013
This is information on a product in full production.
DocID15406 Rev 4
Packaging
Tape and reel
Tube
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