STB27NM60ND Datasheet, PDF (3/19 Pages) STMicroelectronics – Low input capacitance and gate charge

STB27NM60ND, STW27NM60ND
1
Electrical ratings
Electrical ratings
Table 2. Absolute maximum ratings
Symbol
Parameter
Value
V_DS
Drain-source voltage
600
V_GS Gate-source voltage
±25
I_D
Drain current (continuous) at T_C = 25 °C
21
I_D
Drain current (continuous) at T_C = 100 °C
13
I_DM ⁽¹⁾ Drain current (pulsed)
84
P_TOT Total dissipation at T_C = 25 °C
160
dv/dt⁽²⁾ Peak diode recovery voltage slope
40
T_stg
Storage temperature
T_J
Max. operating junction temperature
1. Pulse width limited by safe operating area
2. I_SD ≤ 21 A, di/dt ≤ 600 A/µs, V_DD = 80% V_(BR)DSS
–55 to 150
150
Symbol
Table 3. Thermal data
Parameter
D²PAK
TO-247
R_thj-case Thermal resistance junction-case max
R_thj-amb Thermal resistance junction-ambient max
R_thj-pcb(1) Thermal resistance junction-ambient max
1. When mounted on 1inch² FR-4 board, 2 oz Cu
0.78
50
30
Table 4. Avalanche characteristics
Symbol
Parameter
Max value
I_AS
Avalanche current, repetitive or not-repetitive
(pulse width limited by T_J max)
10
Single pulse avalanche energy
E_AS
(starting T_J = 25 °C, I_D = I_AS, V_DD = 50 V)
850
Unit
V
V
A
A
A
W
V/ns
°C
°C
Unit
°C/W
°C/W
°C/W
Unit
A
mJ
DocID15406 Rev 4
3/19
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