STB155N3LH6 Datasheet, PDF (6/18 Pages) STMicroelectronics – N-channel 30 V, 2.4 mΩ , 80 A, DPAK, DPAK STripFETVI DeepGATE Power MOSFET

Electrical characteristics
STB155N3LH6, STD155N3LH6
2.1 Electrical characteristics (curves)
Figure 2. Safe operating area
Figure 3.
ID
(A)
100
OpeLri^a_mtiiotendin^{bythmisaaxreRaDSis(on)}
Tj=175°C
Tc=25°C
Single pulse
AM09101v1
100µs
1ms
Thermal impedance
10
10ms
1
0.1
1
10
VDS(V)
Figure 4. Output characteristics
ID
(A)
VGS=10V
300
5V
250
200
Figure 5.
AM09102v1
ID
(A)
200
Transfer characteristics
VDS=1V
4V
150
AM09103v1
150
100
100
3V
50
50
0
0
0.5
1.0
1.5
VDS(V)
0
0
1
2
3
4
VGS(V)
Figure 6. Normalized B_VDSS vs temperature Figure 7. Static drain-source on resistance
BVDSS
(norm)
1.10
1.05
ID=1mA
AM09104v1
RDS(on)
(mΩ)
3.5
3.0
VGS=10V
AM09105v1
2.5
1.00
2.0
0.95
1.5
0.90
1.0
0.85
0.5
0.80
-75 -25
25
75 125 TJ(°C)
0
0
20
40
60
80 ID(A)
6/18
Doc ID 17893 Rev 3