STB155N3LH6 Datasheet, PDF (4/18 Pages) STMicroelectronics – N-channel 30 V, 2.4 mΩ , 80 A, DPAK, DPAK STripFETVI DeepGATE Power MOSFET

Electrical characteristics
2
Electrical characteristics
STB155N3LH6, STD155N3LH6
(T_CASE = 25 °C unless otherwise specified).
Table 5. Static
Symbol
Parameter
V_(BR)DSS
Drain-source breakdown
voltage (V_GS= 0)
I_DSS
Zero gate voltage drain
current (V_GS = 0)
I_GSS
V_GS(th)
Gate body leakage current
(V_DS = 0)
Gate threshold voltage
R_DS(on)
Static drain-source on
resistance
Test conditions
I_D = 250 µA
V_DS = 30 V
V_DS = 30 V,Tc = 125 °C
V_GS = ± 20 V
V_DS = V_GS, I_D = 250 µA
V_GS = 10 V, I_D = 40 A
V_GS = 5 V, I_D = 40 A
Min. Typ.
30
1
2.4
3.2
Max. Unit
V
1 µA
10 µA
±100 nA
2.5 V
3.0 mΩ
4.0 mΩ
Table 6. Dynamic
Symbol
Parameter
C_iss
C_oss
C_rss
Input capacitance
Output capacitance
Reverse transfer
capacitance
Q_g Total gate charge
Q_gs Gate-source charge
Q_gd Gate-drain charge
R_G Gate input resistance
Test conditions
V_DS = 25 V, f=1 MHz,
V_GS = 0
V_DD = 15 V, I_D = 80 A
V_GS = 10 V
(see Figure 14)
f = 1 MHz gate bias
Bias = 0 test signal
level = 20 mV
open drain
Min Typ. Max. Unit
3800
pF
-
725
- pF
420
pF
80
nC
-
15
- nC
15
nC
-
1.5
-
Ω
4/18
Doc ID 17893 Rev 3