STB155N3LH6 Datasheet, PDF (3/18 Pages) STMicroelectronics – N-channel 30 V, 2.4 mΩ , 80 A, DPAK, DPAK STripFETVI DeepGATE Power MOSFET

STB155N3LH6, STD155N3LH6
1
Electrical ratings
Electrical ratings
Table 2. Absolute maximum ratings
Symbol
Parameter
V_DS Drain-source voltage (V_GS = 0)
V_GS Gate-source voltage
I_D ⁽¹⁾ Drain current (continuous) at T_C = 25 °C
I_D
I_DM ⁽²⁾
Drain current (continuous) at T_C = 100 °C
Drain current (pulsed)
P_TOT
T_stg
Total dissipation at T_C = 25 °C
Storage temperature
T_j
Operating junction temperature
1. Limited by wire bonding.
2. Pulse width limited by safe operating area.
Value
Unit
30
V
± 20
V
80
A
80
A
320
A
110
W
°C
-55 to 175
°C
Table 3. Thermal resistance
Symbol
Parameter
R_thj-case Thermal resistance junction-case max
R_thj-pcb(1) Thermal resistance junction-pcb max
1. When mounted on 1 inch² OZ Cu board.
Value
D²PAK
DPAK
1.36
35
50
Unit
°C/W
°C/W
Table 4. Thermal resistance
Symbol
Parameter
I_AV
E_AS ⁽¹⁾
Not-repetitive avalanche current
Single pulse avalanche energy
1. Starting Tj = 25°C, I_D = 40 A, V_DD = 25 V
Value
Unit
40
A
525
mJ
Doc ID 17893 Rev 3
3/18