STB155N3LH6 Datasheet, PDF (1/18 Pages) STMicroelectronics – N-channel 30 V, 2.4 mΩ , 80 A, DPAK, DPAK STripFETVI DeepGATE Power MOSFET

STB155N3LH6
STD155N3LH6
N-channel 30 V, 2.4 mΩ , 80 A, D²PAK, DPAK
STripFET™VI DeepGATE™ Power MOSFET
Features
Order codes
STB155N3LH6
STD155N3LH6
V_DSS
30 V
R_DS(on)
max
3.0 mΩ
1. Current limited by package
■ 100% avalanche tested
■ Logic level drive
I_D(1) P_TOT
80 A 110 W
Applications
■ Switching applications
■ Automotive
Description
These devices are N-channel Power MOSFETs
developed using the 6^th generation of STripFET™
DeepGATE™ technology, with a new gate
structure. The resulting Power MOSFETs exhibits
the lowest R_DS(on) in all packages.
TAB
3
1
D²PAK
TAB
3
1
DPAK
Figure 1. Internal schematic diagram
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Table 1. Device summary
Order codes
STB155N3LH6
STD155N3LH6
Marking
155N3LH6
3
!-V
Package
D²PAK
DPAK
Packaging
Tape and reel
September 2011
Doc ID 17893 Rev 3
1/18
www.st.com
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