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STB155N3LH6 Datasheet, PDF (5/18 Pages) STMicroelectronics – N-channel 30 V, 2.4 mΩ , 80 A, DPAK, DPAK STripFETVI DeepGATE Power MOSFET
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STB155N3LH6, STD155N3LH6
Electrical characteristics
Table 7. Switching on/off (inductive load)
Symbol
Parameter
Test conditions
Min. Typ.
td(on)
tr
Turn-on delay time
Rise time
VDD = 15 V, ID = 40 A,
15
RG = 4.7 Ω, VGS = 10 V -
85
(see Figure 15)
td(off)
tf
Turn-off delay time
Fall time
VDD = 15 V, ID = 40 A,
100
RG = 4.7 Ω, VGS = 10 V -
40
(see Figure 15)
Max. Unit
ns
-
ns
ns
-
ns
Table 8. Source drain diode
Symbol
Parameter
Test conditions
ISD
ISDM(1)
VSD(2)
Source-drain current
Source-drain current (pulsed)
Forward on voltage
trr
Qrr
IRRM
Reverse recovery time
Reverse recovery charge
Reverse recovery current
ISD = 40 A, VGS = 0
ISD = 80 A,
di/dt = 100 A/µs,
VDD = 24 V
(see Figure 17)
1. Pulse width limited by safe operating area.
2. Pulsed: pulse duration = 300 µs, duty cycle 1.5%
Min. Typ. Max. Unit
80 A
-
320 A
-
1.3 V
35
ns
- 26.5
nC
1.7
A
Doc ID 17893 Rev 3
5/18
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