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STB12NM50ND Datasheet, PDF (6/13 Pages) STMicroelectronics – N-channel 500 V, 0.29 Ω, 11 A, FDmesh™ II Power MOSFET (with fast diode), D2PAK, DPAK | |||
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Test circuits
3
Test circuits
STB12NM50ND, STD12NM50ND
Figure 2. Switching times test circuit for
resistive load
Figure 3. Gate charge test circuit
VDD
VD
VGS
RG
PW
RL
2200
µF
D.U.T.
3.3
µF VDD
12V
47kâ¦
1kâ¦
100nF
Vi=20V=VGMAX
2200
µF
IG=CONST
2.7kâ¦
100â¦
D.U.T.
VG
47kâ¦
PW
AM01468v1
1kâ¦
AM01469v1
Figure 4. Test circuit for inductive load
Figure 5. Unclamped Inductive load test
switching and diode recovery times
circuit
G
25 â¦
A
D
D.U.T.
S
B
AA
FAST
DIODE
L=100µH
B
3.3
B
µF
D
G
RG
S
1000
µF
VDD
Vi
L
VD
2200
3.3
µF
µF
VDD
ID
D.U.T.
Pw
AM01470v1
Figure 6. Unclamped inductive waveform
Figure 7. Switching time waveform
AM01471v1
V(BR)DSS
VD
ton
tdon
tr
toff
tdoff tf
VDD
IDM
ID
0
VDD
90%
10% VDS
90%
VGS
90%
10%
AM01472v1
0
10%
AM01473v1
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