STB12NM50ND Datasheet, PDF (5/13 Pages) STMicroelectronics – N-channel 500 V, 0.29 Ω, 11 A, FDmesh™ II Power MOSFET (with fast diode), D2PAK, DPAK

STB12NM50ND, STD12NM50ND
Electrical characteristics
Table 7.
Symbol
Switching times
Parameter
t_d(on)
t_r
t_d(off)
t_f
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Test conditions
V_DD = 250 V, I_D = 5.5 A,
R_G = 4.7 Ω, V_GS = 10 V
(see Figure 2)
Min Typ Max Unit
TBD
ns
TBD
ns
TBD
ns
TBD
ns
Table 8.
Symbol
Source drain diode
Parameter
Test conditions
Min Typ Max Unit
I_SD
I_SDM ⁽¹⁾
V_SD(2)
Source-drain current
Source-drain current (pulsed)
Forward on voltage
I_SD = 11 A, V_GS=0
t_rr
Q_rr
I_RRM
Reverse recovery time
Reverse recovery charge
Reverse recovery current
I_SD = 11 A, di/dt =100 A/µs,
V_DD = 100 V
(see Figure 4)
t_rr
Q_rr
I_RRM
Reverse recovery time
Reverse recovery charge
Reverse recovery current
V_DD = 100 V
di/dt =100 A/µs, I_SD = 11 A
Tj = 150 °C (see Figure 4)
1. Pulse width limited by safe operating area
2. Pulsed: pulse duration = 300 µs, duty cycle 1.5%
11 A
44 A
TBD V
TBD
ns
TBD
nC
TBD
A
TBD
ns
TBD
nC
TBD
A
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