STB12NM50ND Datasheet, PDF (1/13 Pages) STMicroelectronics – N-channel 500 V, 0.29 Ω, 11 A, FDmesh™ II Power MOSFET (with fast diode), D2PAK, DPAK

STB12NM50ND
STD12NM50ND
N-channel 500 V, 0.29 Ω, 11 A, FDmesh™ II Power MOSFET
(with fast diode), D²PAK, DPAK
Preliminary Data
Features
Type
V_DSS (@Tjmax) R_DS(on) max I_D
STB12NM50ND 550 V
0.38 Ω 11 A
STD12NM50ND 550 V
0.38 Ω 11 A
■ The worldwide best R_DS(on)* area amongst the
fast recovery diode devices
■ 100% avalanche tested
■ Low input capacitance and gate charge
■ Low gate input resistance
■ Extremely high dv/dt and avalanche
capabilities
Application
■ Switching applications
Description
The FDmesh™ II series belongs to the second
generation of MDmesh™ technology. This
revolutionary Power MOSFET associates a new
vertical structure to the company's strip layout
and associates all advantages of reduced on-
resistance and fast switching with an intrinsic fast-
recovery body diode.Strongly recommended for
bridge topologies, in ZVS phase-shift converters.
3
1
D²PAK
3
1
DPAK
Figure 1. Internal schematic diagram
$
'
3
Table 1. Device summary
Order codes
Marking
STB12NM50ND
STD12NM50ND
12NM50ND
12NM50ND
Package
D²PAK
DPAK
!-V
Packaging
Tape and reel
Tape and reel
September 2008
Rev 1
This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to
change without notice.
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