STB12NM50ND Datasheet, PDF (3/13 Pages) STMicroelectronics – N-channel 500 V, 0.29 Ω, 11 A, FDmesh™ II Power MOSFET (with fast diode), D2PAK, DPAK

STB12NM50ND, STD12NM50ND
1
Electrical ratings
Electrical ratings
Table 2. Absolute maximum ratings
Symbol
Parameter
V_DS
Drain-source voltage (V_GS=0)
V_GS
Gate-source voltage
I_D
Drain current (continuous) at T_C = 25 °C
I_D
Drain current (continuous) at T_C = 100 °C
I_DM ⁽¹⁾ Drain current (pulsed)
P_TOT Total dissipation at T_C = 25 °C
dv/dt ^{(2) Peak diode recovery voltage slope}
T_stg
Storage temperature
T_j
Operating junction temperature
1. Pulse width limited by safe operating area
2. I_SD ≤ 11 A, di/dt ≤ 600 A/µs, V_DD = 80% V_(BR)DSS
Table 3. Thermal data
Symbol
Parameter
Rthj-case
Rthj-pcb
T_l
Thermal resistance junction-case max
Thermal resistance junction-pcb max
Maximum lead temperature for soldering
purposes
Value
500
± 25
11
6.9
44
100
40
-55 to 150
150
Unit
V
V
A
A
A
W
V/ns
°C
°C
D²PAK
DPAK
1.25
30
50
300
Unit
°C/W
°C/W
°C
Table 4. Avalanche characteristics
Symbol
Parameter
I_AS
Avalanche current, repetitive or not-repetitive (pulse
width limited by Tj max)
Single pulse avalanche energy
E_AS
(starting Tj = 25 °C, I_D = I_AS, V_DD = 50 V)
Max value
Unit
5
A
350
mJ
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