STB12NM50ND Datasheet, PDF (4/13 Pages) STMicroelectronics – N-channel 500 V, 0.29 Ω, 11 A, FDmesh™ II Power MOSFET (with fast diode), D2PAK, DPAK

Electrical characteristics
2
Electrical characteristics
STB12NM50ND, STD12NM50ND
(T_CASE=25°C unless otherwise specified)
Table 5.
Symbol
On/off states
Parameter
Test conditions
Min. Typ. Max. Unit
V_(BR)DSS
Drain-source breakdown
voltage
I_D = 1 mA, V_GS= 0
500
dv/dt⁽¹⁾
Drain-source voltage slope
V_DD = 400 V,I_D = 11 A,
V_GS = 10 V
I_DSS
Zero gate voltage drain
current (V_GS = 0)
V_DS = Max rating,
V_DS = Max rating,@125 °C
I_GSS
Gate body leakage current
(V_DS = 0)
V_GS = ±20 V
V_GS(th) Gate threshold voltage
V_DS= V_GS, I_D = 250 µA
3
R_DS(on)
Static drain-source on
resistance
V_GS= 10 V, I_D= 5.5 A
1. Value measured at turn off under inductive load
44
4
0.29
1
100
100
5
0.38
V
V/ns
µA
µA
nA
V
Ω
Table 6.
Symbol
Dynamic
Parameter
Test conditions
Min. Typ. Max. Unit
g_fs(1)
C_iss
C_oss
C_rss
Forward transconductance
Input capacitance
Output capacitance
Reverse transfer
capacitance
V_DS =15 V, I_D= 5.5 A
V_DS = 50 V, f =1 MHz,
V_GS = 0
8
S
TBD
pF
TBD
pF
TBD
pF
C_oss
(2)
eq.
Equivalent output
capacitance
V_GS = 0, V_DS = 0 to 400 V
TBD
pF
f=1 MHz Gate DC Bias=0
Rg Gate input resistance
Test signal level=20 mV
TBD
Ω
open drain
Q_g Total gate charge
Q_gs Gate-source charge
Q_gd Gate-drain charge
V_DD = 400 V, I_D = 11 A
V_GS = 10 V
(see Figure 3)
TBD
nC
TBD
nC
TBD
nC
1. Pulsed: pulse duration = 300 µs, duty cycle 1.5%
2. C_{oss eq.} is defined as a constant equivalent capacitance giving the same charging time as C_oss when V_DS
increases from 0 to 80% V_DSS
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