E-L6205PD Datasheet, PDF (5/21 Pages) STMicroelectronics – DMOS DUAL FULL BRIDGE DRIVER

ELECTRICAL CHARACTERISTICS
(T_amb = 25 °C, V_s = 48V, unless otherwise specified)
Symbol
Parameter
Test Conditions
V_Sth(ON) Turn-on Threshold
V_Sth(OFF) Turn-off Threshold
I_S Quiescent Supply Current
All Bridges OFF;
T_j = -25°C to 125°C ⁽⁷⁾
T_j(OFF) Thermal Shutdown Temperature
Output DMOS Transistors
R_DS(ON) High-Side Switch ON Resistance T_j = 25 °C
T_j =125 °C ⁽⁷⁾
Low-Side Switch ON Resistance T_j = 25 °C
T_j =125 °C ⁽⁷⁾
I_DSS Leakage Current
EN = Low; OUT = V_S
EN = Low; OUT = GND
Source Drain Diodes
V_SD Forward ON Voltage
I_SD = 2.8A, EN = LOW
t_rr Reverse Recovery Time
I_f = 2.8A
t_fr Forward Recovery Time
Logic Input
V_IL Low level logic input voltage
V_IH High level logic input voltage
I_IL Low Level Logic Input Current GND Logic Input Voltage
I_IH High Level Logic Input Current 7V Logic Input Voltage
V_th(ON) Turn-on Input Threshold
V_th(OFF) Turn-off Input Threshold
V_th(HYS) Input Threshold Hysteresis
Switching Characteristics
t_{D(on)EN Enable to out turn ON delay time} ⁽⁸⁾ I_LOAD =2.8A, Resistive Load
t_D(on)IN Input to out turn ON delay time I_LOAD =2.8A, Resistive Load
(dead time included)
t_{RISE Output rise time}⁽⁸⁾
I_LOAD =2.8A, Resistive Load
t_{D(off)EN Enable to out turn OFF delay time} ⁽⁸⁾ I_LOAD =2.8A, Resistive Load
L6205
Min Typ Max Unit
6.6
7
7.4
V
5.6
6
6.4
V
5
10
mA
165
°C
0.34 0.4
Ω
0.53 0.59
Ω
0.28 0.34
Ω
0.47 0.53
Ω
-0.15
2
mA
mA
1.15 1.3
V
300
ns
200
ns
-0.3
0.8
V
2
7
V
-10
µA
10
µA
1.8
2.0
V
0.8
1.3
V
0.25 0.5
V
100 250 400
ns
1.6
µs
40
250
ns
300 550 800
ns
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