E-L6205PD Datasheet, PDF (13/21 Pages) STMicroelectronics – DMOS DUAL FULL BRIDGE DRIVER

L6205
PARALLELED OPERATION
The outputs of the L6205 can be paralleled to increase the output current capability or reduce the power dissi-
pation in the device at a given current level. It must be noted, however, that the internal wire bond connections
from the die to the power or sense pins of the package must carry current in both of the associated half bridges.
When the two halves of one full bridge (for example OUT1_A and OUT2_A) are connected in parallel, the peak
current rating is not increased since the total current must still flow through one bond wire on the power supply
or sense pin. In addition, the over current detection senses the sum of the current in the upper devices of each
bridge (A or B) so connecting the two halves of one bridge in parallel does not increase the over current detec-
tion threshold.
For most applications the recommended configuration is Half Bridge 1 of Bridge A paralleled with the Half Bridge
1 of the Bridge B, and the same for the Half Bridges 2 as shown in Figure 12. The current in the two devices
connected in parallel will share very well since the R_DS(ON) of the devices on the same die is well matched.
In this configuration the resulting Bridge has the following characteristics.
- Equivalent Device: FULL BRIDGE
- R_DS(ON) 0.15Ω Typ. Value @ T_J = 25°C
- 5.6A max RMS Load Current
- 11.2A OCD Threshold
Figure 12. Parallel connection for higher current
+
VS
8-52V_DC
C₁
POWER
GROUND
-
SIGNAL
GROUND
VS_{A 17}
C₂
VS_{B 14}
LOAD
D₁
R_P
VCP
19
C_BOOT
D₂
C_P
VBOOT
12
SENSE_{A 3}
SENSE_{B 8}
OUT1_{A 4}
OUT2_{A 18}
OUT1_{B 7}
OUT2_{B 13}
EN_B
11
EN_A
R_EN
20
EN
C_EN
1 ^IN1A
2 ^IN2A
9 ^IN1B
10 ^IN2B
GND
16
GND
15
GND
6
GND
5
IN1
IN2
D02IN1359
To operate the device in parallel and maintain a lower over current threshold, Half Bridge 1 and the Half Bridge
2 of the Bridge A can be connected in parallel and the same done for the Bridge B as shown in Figure 13. In
this configuration, the peak current for each half bridge is still limited by the bond wires for the supply and sense
pins so the dissipation in the device will be reduced, but the peak current rating is not increased. This configu-
ration, the resulting bridge has the following characteristics.
- Equivalent Device: FULL BRIDGE
- R_DS(ON) 0.15Ω Typ. Value @ T_J = 25°C
- 2.8A max RMS Load Current
- 5.6A OCD Threshold
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