E-L6205PD Datasheet, PDF (14/21 Pages) STMicroelectronics – DMOS DUAL FULL BRIDGE DRIVER

L6205
Figure 13. Parallel connection with lower Overcurrent Threshold
+
VS
8-52V_DC
C₁
POWER
GROUND
-
SIGNAL
GROUND
LOAD
VS_A
17
C₂
VS_B
14
D₁
R_P
VCP
19
C_BOOT
D₂
C_P
VBOOT
12
SENSE_{A 3}
SENSE_{B 8}
OUT1_A
4
OUT2_A
18
OUT1_B
7
OUT2_{B 13}
EN_A
20
EN_B
R_EN
11
EN
C_EN
1
IN1_A
2
IN2_A
9
IN1_B
10
IN2_B
GND
16
GND
15
GND
6
GND
5
IN_A
IN_B
D02IN1360
It is also possible to parallel the four Half Bridges to obtain a simple Half Bridge as shown in Fig. 14 The resulting
half bridge has the following characteristics.
- Equivalent Device: HALF BRIDGE
- R_DS(ON) 0.075Ω Typ. Value @ T_J = 25°C
- 5.6A max RMS Load Current
- 11.2A OCD Threshold
Figure 14. Paralleling the four Half Bridges
+
VS
8-52V_DC
C₁
POWER
GROUND
-
SIGNAL
GROUND
VS_{A 17}
C₂
VS_{B 14}
D₁
R_P
VCP
19
C_BOOT
D₂
C_P
VBOOT
12
SENSE_{A 3}
SENSE_{B 8}
OUT1_{A 4}
LOAD
OUT2_{A 18}
OUT1_{B 7}
OUT2_{B 13}
EN_B
11
EN_A
20
1 ^IN1A
2 ^IN2A
9 ^IN1B
10 ^IN2B
GND
16
GND
15
GND
6
GND
5
R_EN
EN
C_EN
IN
D02IN1366
14/21