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E-L6205PD Datasheet, PDF (12/21 Pages) STMicroelectronics – DMOS DUAL FULL BRIDGE DRIVER
L6205
APPLICATION INFORMATION
A typical application using L6205 is shown in Fig. 11. Typical component values for the application are shown
in Table 2. A high quality ceramic capacitor in the range of 100 to 200 nF should be placed between the power
pins (VSA and VSB) and ground near the L6205 to improve the high frequency filtering on the power supply and
reduce high frequency transients generated by the switching. The capacitors connected from the ENA and ENB
inputs to ground set the shut down time for the Brgidge A and Bridge B respectively when an over current is
detected (see Overcurrent Protection). The two current sources (SENSEA and SENSEB) should be connected
to Power Ground with a trace length as short as possible in the layout. To increase noise immunity, unused logic
pins (except ENA and ENB) are best connected to 5V (High Logic Level) or GND (Low Logic Level) (see pin
description). It is recommended to keep Power Ground and Signal Ground separated on PCB.
Table 2. Component Values for Typical Application
C1
100uF
D1
C2
100nF
D2
CBOOT
220nF
RENA
CP
10nF
RENB
CENA
5.6nF
RP
CENB
5.6nF
Figure 11. Typical Application
+
VS
8-52VDC
C1
POWER
GROUND
-
SIGNAL
GROUND
VSA 17
C2
VSB 14
D1
RP
VCP
19
CBOOT
D2
CP
VBOOT
12
SENSEA 3
SENSEB 8
LOADA
OUT1A 4
OUT2A 18
LOADB
OUT1B 7
OUT2B 13
1N4148
1N4148
100kΩ
100kΩ
100Ω
ENA RENA
20
CENA
ENB RENB
11
CENB
9 IN1B
10 IN2B
1 IN1A
2 IN2A
16
GND
15
GND
6
GND
5
GND
D02IN1345
ENABLEA
ENABLEB
IN1B
IN2B
IN1A
IN2A
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