M50FLW040A_06 Datasheet, PDF (38/64 Pages) STMicroelectronics – 4-Mbit (5 × 64 Kbyte blocks + 3 × 16 × 4 Kbyte sectors) 3-V supply Firmware Hub / low-pin count Flash memory

Program and Erase times
7
Program and Erase times
M50FLW040A, M50FLW040B
The Program and Erase times are shown in Table 18.
Table 18. Program and Erase times
Parameter
Interface
Test Condition Min Typ⁽¹⁾ Max Unit
Byte Program
Double Byte Program
Quadruple Byte Program
Block Program
Sector Erase (4 KBytes)⁽⁵⁾
Block Erase (64 KBytes)
Chip Erase
Program/Erase Suspend to
Program pause⁽⁵⁾
FWH
A/A Multiplexed
FWH
A/A Multiplexed
V_PP = 12 V ± 5%
V_PP = 12 V ± 5%
V_PP = 12 V ± 5%
V_PP = V_CC
V_PP = 12 V ± 5%
V_PP = V_CC
V_PP = 12 V ± 5%
V_PP = V_CC
V_PP = 12 V ± 5%
10 200 µs
10⁽²⁾ 200 µs
10⁽³⁾ 200 µs
0.1⁽⁴⁾ 5
s
0.4 5
0.4 4
s
0.5 5
0.75 8
s
1 10
5
s
5 µs
Program/Erase Suspend to
Block Erase/Sector Erase
pause⁽⁵⁾
30 µs
1. T_A = 25°C, V_CC = 3.3V
2. Time to program two Bytes.
3. Time to program four Bytes.
4. Time obtained executing the Quadruple Byte Program command.
5. Sampled only, not 100% tested.
38/64