STD9N40M2 Datasheet, PDF (3/16 Pages) STMicroelectronics – Low gate input resistance

STD9N40M2
1
Electrical ratings
Electrical ratings
Symbol
Table 2. Absolute maximum ratings
Parameter
V_DS
V_GS
I_D
I_D
(1)
I_DM
P_TOT
(1)
dv/dt
(2)
dv/dt
Drain-source voltage
Gate-source voltage
Drain current (continuous) at T_C = 25 °C
Drain current (continuous) at T_C = 100 °C
Drain current (pulsed)
Total dissipation at T_C = 25 °C
Peak diode recovery voltage slope
MOSFET dv/dt ruggedness
T_stg Storage temperature
T_j
Max. operating junction temperature
1. I_SD ≤ 6 A, di/dt ≤ 400 A/μs; V_{DS peak} < V_(BR)DSS, V_DD=320 V
2. V_DS ≤ 320 V
Value
400
± 25
6
3.8
24
60
15
50
- 55 to 150
Symbol
Table 3. Thermal data
Parameter
R_thj-case Thermal resistance junction-case max
(1)
R_thj-pcb Thermal resistance junction-pcb max
1. When mounted on 1 inch² FR-4, 2 Oz copper board
Value
2.08
50
Symbol
Table 4. Avalanche characteristics
Parameter
Avalanche current, repetitive or not repetitive
I_{AR (pulse width limited by Tjmax)}
E_AS
Single pulse avalanche energy (starting T_j=25°C,
I_D= I_AR, V_DD=50)
Value
2.5
148
Unit
V
V
A
A
A
W
V/ns
°C
Unit
°C/W
°C/W
Unit
A
mJ
DocID025752 Rev 2
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