STD3LN80K5 Datasheet, PDF (3/15 Pages) STMicroelectronics – Ultra-low gate charge

STD3LN80K5
Electrical ratings
1
Electrical ratings
Symbol
Table 2: Absolute maximum ratings
Parameter
Value
Unit
VGS
ID
ID
ID⁽¹⁾
PTOT
dv/dt ⁽²⁾
dv/dt ⁽³⁾
Tstg
Tj
Gate-source voltage
Drain current (continuous) at TC = 25 °C
Drain current (continuous) at TC = 100 °C
Drain current (pulsed)
Total dissipation at TC = 25 °C
Peak diode recovery voltage slope
MOSFET dv/dt ruggedness
Storage temperature range
Operating junction temperature range
± 30
2
1.25
8
45
4.5
50
- 55 to 150
V
A
A
A
W
V/ns
°C
Notes:
(1)_{Pulse width limited by safe operating area.}
(2)_{ISD ≤ 2 A, di/dt ≤ 100 A/µs; VDSpeak < V(BR)DSS, VDD = 640 V}
(3)_{VDS ≤ 640 V.}
Symbol
Rthj-case
Rthj-pcb⁽¹⁾
Table 3: Thermal data
Parameter
Thermal resistance junction-case
Thermal resistance junction-pcb
Notes:
(1)_{When mounted on 1inch² FR-4 board, 2 oz Cu.}
Value
2.78
50
Unit
°C/W
°C/W
Symbol
Table 4: Avalanche characteristics
Parameter
IAR Avalanche current, repetitive or not repetitive (pulse width limited by Tjmax)
EAS Single pulse avalanche energy (starting Tj = 25°C, ID = IAR; VDD = 50 V)
Value Unit
0.7 A
155 mJ
DocID027714 Rev 2
3/15