STD3LN80K5 Datasheet, PDF (1/15 Pages) STMicroelectronics – Ultra-low gate charge

STD3LN80K5
N-channel 800 V, 2.75 Ω typ., 2 A MDmesh™ K5
Power MOSFET in a DPAK package
Datasheet - production data
Features
Order code
STD3LN80K5
V DS
800 V
RDS(on) max
ID
3.25 Ω
2A
Figure 1: Internal schematic diagram
D(2, TAB)
 Industry’s lowest RDS(on) x area
 Industry’s best FoM (figure of merit)
 Ultra-low gate charge
 100% avalanche tested
 Zener-protected
Applications
 Switching applications
G(1)
S(3)
Order code
STD3LN80K5
Description
This very high voltage N-channel Power
MOSFET is designed using MDmesh™ K5
technology based on an innovative proprietary
vertical structure. The result is a dramatic
reduction in on-resistance and ultra-low gate
charge for applications requiring superior power
density and high efficiency.
AM01476v1
Table 1: Device summary
Marking
Package
3LN80K5
DPAK
Packing
Tape and reel
July 2016
DocID027714 Rev 2
This is information on a product in full production.
1/15
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