ESDAULC6-3BP6 Datasheet, PDF (3/11 Pages) STMicroelectronics – ESD protection for high speed interface

ESDAULC6-3BP6, ESDAULC6-3BF2
Characteristics
Figure 3.
Relative variation of peak pulse
power versus initial junction
temperature (SOT-666)
PPP[Tj initial] / PPP[Tj initial=25°C)
1.1
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
Tj(°C)
0.0
0
25
50
75
100
125
150
Figure 4.
Relative variation of peak pulse
power versus initial junction
temperature (Flip-Chip)
P_PP[T_j initial] / P_PP [T_j initial=25°C]
1.1
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0.0
0
T_j(°C)
25
50
75
100
125
150
Figure 5.
Peak pulse power versus
exponential pulse duration
(SOT-666)
PPP(W)
1000
Tj initial=25°C
Figure 6.
Peak pulse power versus
exponential pulse duration
(Flip-Chip)
P_PP(W)
1000
T_j initial = 25 °C
100
100
10
1
tp(µs)
t_P(µs)
10
1
10
100
10
100
Figure 7.
Clamping voltage versus peak
pulse current (typical values)
(SOT-666)
IPP(A)
10.0
8/20µs
Tj initial=25°C
Figure 8.
Clamping voltage versus peak
pulse current (typical values)
(Flip-Chip)
I_PP(A)
10.0
Square wave
2.5 µs
T_j initial =25° C
1.0
1.0
0.1
5
VCL(V)
10
15
20
25
30
0.1
5
V_CL(V)
10
15
20
25
30
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