ESDAULC6-3BP6 Datasheet, PDF (2/11 Pages) STMicroelectronics – ESD protection for high speed interface

Characteristics
1
Characteristics
ESDAULC6-3BP6, ESDAULC6-3BF2
Table 2.
Symbol
Absolute maximum ratings
Parameter
Value (min.) Unit
V_PP Peak pulse voltage ⁽¹⁾
IEC 61000-4-2 contact discharge
IEC 61000-4-2 air discharge
15
kV
15
T_j Maximum operating junction temperature
150
°C
T_stg Storage temperature range
-55 to +150 °C
T_L Maximum lead temperature for soldering during 10 s at 5 mm for case
260
°C
1. For a surge greater than the maximum values, the diode will fail in short-circuit.
Table 3. Electrical characteristics (T_amb = 25° C)
Symbol
Parameter
V_RM Stand-off voltage
V_BR
Breakdown voltage
V_CL
Clamping voltage
I_RM
Leakage current
I_PP
Peak pulse current
αT
Voltage temperature coefficient
C
Capacitance
VCL VBR VRM
Slope: 1/Rd
R_d
Dynamic resistance
Parameter
Test condition
Min
V_BR ⁽¹⁾ I_R = 1 mA
6.0
I_RM
V_RM = 5 V
R_d
Square pulse, I_PP = 6 A, t_p = 2.5 µs
αT
C_i/o-i/o
V_I/O = 0 V,
F = 1 MHz, V_OSC = 30 mV
V_I/O = 1.65 V, V_CC = 4.3 V,
F = 1 MHz, V_OSC = 400 mV
SOT-666
Flip-Chip
SOT-666
Flip-Chip
I
IRM
V
VRM VBR VCL
IPP
Typ Max
9.2
0.5
1.4
1.2
1.0 1.25
1.25 1.5
0.75 0.9
0.9 1.20
Unit
V
µA
Ω
10^-4/°C
pF
1. Same value for I/O to I/O and I/O to GND
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