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STM32F413XG Datasheet, PDF (151/207 Pages) STMicroelectronics – ARM-Cortex-M4 32b MCU+FPU, 125 DMIPS, up to 1.5MB Flash, 320KB RAM, USB OTG FS, 1 ADC, 2 DACs, 2 DFSDMs
STM32F413xG/H
Electrical characteristics
6.3.22 VBAT monitoring characteristics
Symbol
Table 82. VBAT monitoring characteristics
Parameter
Min
Typ
R
Q
Er(1)
TS_vbat(2)(2)
Resistor bridge for VBAT
Ratio on VBAT measurement
Error on Q
ADC sampling time when reading the VBAT
1 mV accuracy
-
50
-
4
–1
-
5
-
1. Guaranteed by design.
2. Shortest sampling time can be determined in the application by multiple iterations.
Max
-
-
+1
-
Unit
KΩ
%
µs
6.3.23 Embedded reference voltage
The parameters given in Table 83 are derived from tests performed under ambient
temperature and VDD supply voltage conditions summarized in Table 16.
Table 83. Embedded internal reference voltage
Symbol
Parameter
Conditions
Min Typ Max Unit
VREFINT
TS_vrefint(1)
Internal reference voltage
ADC sampling time when reading the
internal reference voltage
–40 °C < TA < +125 °C
-
VRERINT_s(2)
Internal reference voltage spread over the
temperature range
TCoeff(2)
tSTART(2)
Temperature coefficient
Startup time
VDD = 3V ± 10mV
-
-
1. Shortest sampling time can be determined in the application by multiple iterations.
2. Guaranteed by design
1.18
10
-
-
-
1.21
-
3
30
6
1.24
V
-
µs
5
mV
50 ppm/°C
10
µs
Table 84. Internal reference voltage calibration values
Symbol
Parameter
Memory address
VREFIN_CAL
Raw data acquired at temperature of
30 °C VDDA = 3.3 V
0x1FFF 7A2A - 0x1FFF 7A2B
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