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| STM32F437XX Datasheet, PDF (129/240 Pages) STMicroelectronics – ARM Cortex-M4 32b MCU+FPU, 225DMIPS, up to 2MB Flash/256+4KB RAM, crypto, USB OTG HS/FS, Ethernet, 17 TIMs, 3 ADCs, 20 comm. interfaces, camera&LCD-TFT | |||
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STM32F437xx and STM32F439xx
Electrical characteristics
6.3.13
Memory characteristics
Flash memory
The characteristics are given at TA = â40 to 105 °C unless otherwise specified.
The devices are shipped to customers with the Flash memory erased.
Table 47. Flash memory characteristics
Symbol Parameter
Conditions
Min Typ Max Unit
Write / Erase 8-bit mode, VDD = 1.7 V
-
5
-
IDD Supply current Write / Erase 16-bit mode, VDD = 2.1 V -
8
-
mA
Write / Erase 32-bit mode, VDD = 3.3 V -
12
-
Symbol
Table 48. Flash memory programming
Parameter
Conditions
Min(1) Typ Max(1) Unit
tprog
Word programming time
Program/erase parallelism
(PSIZE) = x 8/16/32
-
Program/erase parallelism
(PSIZE) = x 8
-
tERASE16KB Sector (16 KB) erase time
Program/erase parallelism
(PSIZE) = x 16
-
16 100(2) µs
400 800
300 600 ms
Program/erase parallelism
(PSIZE) = x 32
-
250 500
Program/erase parallelism
(PSIZE) = x 8
-
1200 2400
tERASE64KB Sector (64 KB) erase time
Program/erase parallelism
(PSIZE) = x 16
-
700 1400 ms
Program/erase parallelism
(PSIZE) = x 32
-
550 1100
Program/erase parallelism
(PSIZE) = x 8
-
2
4
tERASE128KB
Sector (128 KB) erase time
Program/erase parallelism
(PSIZE) = x 16
-
1.3 2.6
s
Program/erase parallelism
(PSIZE) = x 32
-
1
2
Program/erase parallelism
(PSIZE) = x 8
-
16 32
tME
Mass erase time
Program/erase parallelism
(PSIZE) = x 16
-
11
22
s
Program/erase parallelism
(PSIZE) = x 32
-
8
16
DocID024244 Rev 10
129/240
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