STM32F756VG Datasheet, PDF (113/228 Pages) STMicroelectronics – Up to 25 communication interfaces

STM32F756xx
Electrical characteristics
Table 33. Typical and maximum current consumptions in V_BAT mode
Typ
Max⁽²⁾
Symbol Parameter
Conditions⁽¹⁾
T_A =25 °C
T_A =85 °C T_A =105 °C _Unit
V_BAT = V_BAT= V_BAT=
1.7 V 2.4 V 3.3 V
V_BAT = 3.6 V
Backup SRAM OFF, RTC and
LSE OFF
0.03 0.03 0.04
0.2
Backup SRAM ON, RTC and
LSE OFF
0.74 0.75 0.78
3.0
Backup SRAM OFF, RTC ON
and LSE in low drive mode
0.40 0.52 0.72
2.8
Backup SRAM OFF, RTC ON
and LSE in medium low drive
0.40 0.52 0.72
2.8
mode
Backup SRAM OFF, RTC ON
I_{DD_VBAT}
Supply current
in V_BAT mode
and LSE
mode
in
medium
high
drive
0.54 0.64 0.85
3.3
Backup SRAM OFF, RTC ON
and LSE in high drive mode
0.62 0.73 0.94
3.6
Backup SRAM ON, RTC ON and
LSE in low drive mode
1.06
1.18
1.41
5.4
Backup SRAM ON, RTC ON and
LSE in Medium low drive mode
1.16
1.28
1.51
5.8
Backup SRAM ON, RTC ON and
LSE in Medium high drive mode
1.18
1.3
1.54
5.9
Backup SRAM ON, RTC ON and
LSE in High drive mode
1.36
1.48
1.73
6.7
0.4
7.0
6.5
6.5
7.6
µA
8.4
12.7
13.6
13.8
15.5
1. Crystal used: Abracon ABS07-120-32.768 kHz-T with a C_L of 6 pF for typical values.
2. Guaranteed by characterization results.
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