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STM32F446XC Datasheet, PDF (113/202 Pages) STMicroelectronics – ARM Cortex-M4 32b MCU+FPU, 225DMIPS, up to 512kB Flash/128+4KB RAM, USB OTG HS/FS, 17 TIMs, 3 ADCs, 20 comm. interfaces
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STM32F446xC/E
Electrical characteristics
Symbol
Table 48. Flash memory programming
Parameter
Conditions
Min(1) Typ Max(1) Unit
tprog
Word programming time
Program/erase parallelism
(PSIZE) = x 8/16/32
-
16 100(2) µs
Program/erase parallelism
(PSIZE) = x 8
-
400 800
tERASE16KB Sector (16 KB) erase time
Program/erase parallelism
(PSIZE) = x 16
-
300 600 ms
Program/erase parallelism
(PSIZE) = x 32
-
250 500
Program/erase parallelism
(PSIZE) = x 8
-
1200 2400
tERASE64KB Sector (64 KB) erase time
Program/erase parallelism
(PSIZE) = x 16
-
700 1400 ms
Program/erase parallelism
(PSIZE) = x 32
-
550 1100
Program/erase parallelism
(PSIZE) = x 8
-
2
4
tERASE128KB
Sector (128 KB) erase time
Program/erase parallelism
(PSIZE) = x 16
-
1.3 2.6
s
Program/erase parallelism
(PSIZE) = x 32
-
1
2
Program/erase parallelism
(PSIZE) = x 8
-
8
16
tME
Mass erase time
Program/erase parallelism
(PSIZE) = x 16
-
5.5 11
s
Program/erase parallelism
(PSIZE) = x 32
-
8
16
32-bit program operation 2.7
-
3.6 V
Vprog
Programming voltage
16-bit program operation 2.1
-
3.6 V
8-bit program operation
1.7
-
3.6 V
1. Guaranteed based on test during characterization.
2. The maximum programming time is measured after 100K erase operations.
Symbol
Table 49. Flash memory programming with VPP
Parameter
Conditions
Min(1) Typ
tprog
Double word programming
tERASE16KB Sector (16 KB) erase time
tERASE64KB Sector (64 KB) erase time
tERASE128KB Sector (128 KB) erase time
tME
Mass erase time
Vprog
Programming voltage
TA = 0 to +40 °C
VDD = 3.3 V
VPP = 8.5 V
-
-
16
-
230
-
490
-
875
-
3.5
2.7
-
Max(1) Unit
100(2) µs
-
-
ms
-
-
s
3.6
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