English
Language : 

STM32F303RD Datasheet, PDF (100/184 Pages) STMicroelectronics – Reset and supply management
Electrical characteristics
STM32F303xD STM32F303xE
Table 44. Asynchronous non-multiplexed SRAM/PSRAM/NOR read timings(1)
Symbol
Parameter
Min
Max
Unit
tw(NE)
tv(NOE_NE)
tw(NOE)
th(NE_NOE)
FMC_NE low time
FMC_NEx low to FMC_NOE low
FMC_NOE low time
FMC_NOE high to FMC_NE high hold
time
2THCLK– 1
0
2THCLK
2THCLK+1
1
2THCLK+ 1.5
0.5
-
tv(A_NE)
FMC_NEx low to FMC_A valid
-
3
th(A_NOE)
Address hold time after FMC_NOE high
0
-
tv(BL_NE)
FMC_NEx low to FMC_BL valid
-
2 (NA)
ns
th(BL_NOE)
FMC_BL hold time after FMC_NOE high
0
-
tsu(Data_NE)
Data to FMC_NEx high setup time
THCLK + 6
-
tsu(Data_NOE) Data to FMC_NOEx high setup time
THCLK +7
-
th(Data_NOE) Data hold time after FMC_NOE high
0
-
th(Data_NE)
Data hold time after FMC_NEx high
0
-
tv(NADV_NE) FMC_NEx low to FMC_NADV low
-
2
tw(NADV)
FMC_NADV low time
-
THCLK +1.5
1. Based on characterization, not tested in production
Table 45. Asynchronous non-multiplexed SRAM/PSRAM/NOR read-NWAIT timings(1)
Symbol
Parameter
Min
Max
Unit
tw(NE)
FMC_NE low time
7THCLK +0.5 7THCLK+ 1
tw(NOE)
FMC_NWE low time
6THCLK -1.5 6THCLK +2
ns
tsu(NWAIT_NE) FMC_NWAIT valid before FMC_NEx high 4THCLK +5
-
th(NE_NWAIT)
FMC_NEx hold time after FMC_NWAIT
invalid
4THCLK-3
-
1. Based on characterization, not tested in production
100/184
DocID026415 Rev 4