SST12LP08 Datasheet, PDF (79/98 Pages) Silicon Storage Technology, Inc – 2.4 GHz High-Power, High-Gain Power Amplifier

256Mb and 512Mb (256Mb/256Mb), P30-65nm
Maximum Ratings and Operating Conditions
Maximum Ratings and Operating Conditions
Stresses greater than those listed can cause permanent damage to the device. This is
stress rating only, and functional operation of the device at these or any other condi-
tions above those indicated is not guaranteed.
Table 38: Maximum Ratings
Parameter
Temperature under bias
Storage temperature
Voltage on any signal (except V_CC, V_PP, and V_CCQ)
V_PP voltage
V_CC voltage
V_CCQ voltage
Output short circuit current
Maximum Rating
–40°C to + 85 °C
–65°C to + 125 °C
–2V to +4V
–2V to +11.5V
–2V to +4V
–2V to +5.6V
100mA
Notes
1
1, 2
1
1
3
Notes:
1. Voltages shown are specified with respect to V_SS. During infrequent nonperiodic transi-
tions, the level may undershoot to –2V for periods less than 20ns or overshoot to V_CC +
2V or V_CCQ + 2V or V_PP + 2V for periods less than 20ns.
2. Program/erase voltage is typically 1.7–2V; 9V can be applied for 80 hours maximum to-
tal, however, 9V program/erase voltage may reduce block cycling capability.
3. Output is shorted for no more than one second, and more than one output is not shor-
ted at one time.
Table 39: Operating Conditions
Symbol Parameter
Min
T_A
V_CC
V_CCQ
Operating temperature
V_CC supply voltage
I/O supply voltage
–40
1.7
CMOS inputs
1.7
TTL inputs
2.4
V_PPL
V_PP voltage supply (logic level)
V_PPH
Buffered enhanced factory programming V_PP
t_PPH
Maximum V_PP hours
V_PP = V_PPH
BLOCK Main and parameter blocks
ERASE cycles _{Main blocks}
V_PP = V_PPL
V_PP = V_PPH
Parameter blocks
V_PP = V_PPH
0.9
8.5
–
100,000
–
–
Notes: 1. T_A = ambient temperature.
2. In typical operation, V_PP program voltage is V_PPL.
Max
+85
2
3.6
3.6
3.6
9.5
80
–
1000
2500
Unit
°C
V
Notes
1
2
Hours
Cycles
PDF: 09005aef84566799
p30_65nm_MLC_256Mb-512mb.pdf - Rev. B 8/13 EN
79
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