SSM6680GM Datasheet, PDF (5/7 Pages) Silicon Standard Corp. – N-channel Enhancement-mode Power MOSFET

SSM6680GM
15
I _D =11.5A
V _DS =15V
12
9
6
3
0
0
10
20
30
40
Q _G , Total Gate Charge (nC)
Fig 9. Gate Charge Characteristics
f=1.0MHz
10000
Ciss
1000
Coss
Crss
100
10
1
7
13
19
25
31
V _DS (V)
Fig 10. Typical Capacitance Characteristics
10
2.5
2
Tj=150 ^o C
Tj=25 ^o C
1
1.5
0.1
0
0.4
0.8
1.2
1.6
V _SD (V)
Fig 11. Forward Characteristic of
Reverse Diode
1
-50
0
50
100
150
T _j , Junction Temperature ( ^o C )
Fig 12. Gate Threshold Voltage vs.
Junction Temperature
12/16/2005 Rev.3.01
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