SSM6680GM Datasheet, PDF (4/7 Pages) Silicon Standard Corp. – N-channel Enhancement-mode Power MOSFET

SSM6680GM
15
10
5
0
25
50
75
100
125
150
T _c , Case Temperature ( ^o C)
Fig 5. Maximum Drain Current vs.
Case Temperature
3
2.5
2
1.5
1
0.5
0
0
50
100
150
T _{c ,} Case Temperature ( ^o C)
Fig 6. Typical Power Dissipation
100
100us
10
1ms
1
0.1
T _C =25 ^o C
Single Pulse
0.01
0.1
1
10
V _DS (V)
10ms
100ms
1s
10s
DC
100
Fig 7. Maximum Safe Operating Area
1
Duty Factor = 0.5
0.2
0.1
0.1
0.05
0.02
0.01
0.01
Single Pulse
PDM
t
T
Duty Factor = t/T
Peak Tj = PDM x Rthja + Ta
Rthja=125^oC/W
0.001
0.0001
0.001
0.01
0.1
1
10
t , Pulse Width (s)
100
1000
Fig 8. Effective Transient Thermal Impedance
12/16/2005 Rev.3.01
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