SSM6680GM Datasheet, PDF (3/7 Pages) Silicon Standard Corp. – N-channel Enhancement-mode Power MOSFET

SSM6680GM
50
10V
T _C =25 ^o C
8.0V
6.0V
40
4.0V
30
20
10
V _GS =3.0V
0
0
1
1
2
2
3
V _DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
40
T _C =150 ^o C
10V
8.0V
6.0V
4.0V
30
20
10
V _GS =3.0V
0
0
1
1
2
2
3
V _DS , Drain-to-Source Voltage (V)
Fig 2. Typical Output Characteristics
80
I _D =11.5A
T _C =25°C
60
40
20
0
2
4
6
8
10
12
V _GS (V)
Fig 3. On-Resistance vs. Gate Voltage
2
I _D =11.5A
V _GS =10V
1.4
0.8
0.2
-50
0
50
100
150
T _j , Junction Temperature ( ^o C)
Fig 4. Normalized On-Resistance
vs. Junction Temperature
12/16/2005 Rev.3.01
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