SSM6680GM Datasheet, PDF (2/7 Pages) Silicon Standard Corp. – N-channel Enhancement-mode Power MOSFET

SSM6680GM
ELECTRICAL CHARACTERISTICS (at Tj = 25°C, unless otherwise specified)
Symbol
BV_DSS
∆ BV _DSS/∆ Tj
R_DS(ON)
V_GS(th)
g_fs
I_DSS
I_GSS
Q_g
Q_gs
Q_gd
t_d(on)
t_r
t_d(off)
t_f
C_iss
C_oss
C_rss
Parameter
Test Conditions
Drain-source breakdown voltage
Breakdown voltage temperature coefficient
Static drain-source on-resistance²
Gate threshold voltage
Forward transconductance
Drain-source leakage current
Gate-source leakage current
Total gate charge ²
Gate-source charge
Gate-drain ("Miller") charge
Turn-on delay time ²
Rise time
Turn-off delay time
Fall time
Input capacitance
Output capacitance
Reverse transfer capacitance
V_GS=0V, I_D=250uA
Reference to 25°C, I_D=1mA
V_GS=10V, I_D=11.5A
V_GS=4.5V, I_D=9.5A
V_DS=V_GS, I_D=250uA
V_DS=10V, I_D=11.5A
V_{DS=30V, VGS=0V}
V_DS=24V ,V_GS=0V, Tj = 70°C
V_GS=±25V
I_D=11.5A
V_DS=15V
V_GS=5V
V_DS=15V
I_D=1A
R_G=5.5Ω , V_GS=10V
R_D=10Ω
V_GS=0V
V_DS=25V
f=1.0MHz
Min. Typ. Max. Units
30 -
-
V
- 0.02 - V/°C
-
- 11 mΩ
-
-
18 mΩ
1
-
3V
- 30
-
S
-
-
1 ^uA
-
- 25 uA
-
- ±100 nA
- 16.8 - nC
- 4.2 - nC
- 8 - nC
- 8.9 - ns
- 7.3 - ns
- 25.6 - ns
- 18.6 - ns
- 1450 - pF
- 285 - pF
- 180 - pF
Source-Drain Diode
Symbol
V_SD
I_S
Parameter
Test Conditions
Forward voltage ²
I_S=3.5A, V_GS=0V
Continuous Source Current ( Body Diode) V_D=V_G=0V , V_S=1.3V
Min. Typ. Max. Units
-
- 1.3 V
-
- 1.92 A
Notes:
1.Pulse width must be limited to avoid exceeding the maximum junction temperature of 150°C.
2.Pulse width <300us, duty cycle <2%.
12/16/2005 Rev.3.01
www.SiliconStandard.com
2 of 7