SSM6680GM Datasheet, PDF (1/7 Pages) Silicon Standard Corp. – N-channel Enhancement-mode Power MOSFET

SSM6680GM
N-channel Enhancement-mode Power MOSFET
PRODUCT SUMMARY
BV_DSS
R _DS(ON)
I_D
30V
11mΩ
11.5A
Pb-free; RoHS-compliant SO-8
D
D
D
D
SO-8
G
S
SS
DESCRIPTION
The SSM6680GM acheives fast switching performance
with low gate charge without a complex drive circuit. It
is suitable for low voltage applications such as DC/DC
converters and general load-switching circuits.
The SSM6680M is supplied in an RoHS-compliant
SO-8 package, which is widely used for medium power
commercial and industrial surface mount applications.
ABSOLUTE MAXIMUM RATINGS
Symbol
V_DS
V_GS
I_D
I_DM
P_D
Parameter
Drain-source voltage
Gate-source voltage
Continuous drain current, T_C = 25°C
Pulsed drain current¹
T_C = 70°C
Total power dissipation, T_C = 25°C
Linear derating factor
Value
30
±25
11.5
9.5
50
2.5
0.02
Units
V
V
A
A
A
W
W/°C
T_STG
T_J
Storage temperature range
Operating junction temperature range
THERMAL CHARACTERISTICS
Symbol
R_ΘJA
Parameter
Maximum thermal resistance, junction-ambient³
-55 to 150
°C
-55 to 150
°C
Value
50
Units
°C/W
Notes:
1.Pulse width must be limited to avoid exceeding the maximum junction temperature of 150°C.
2.Pulse width <300us, duty cycle <2%.
3.Mounted on a square inch of copper pad on FR4 board ; 125°C/W when mounted on the minimum pad area required for soldering.
12/16/2005 Rev.3.01
www.SiliconStandard.com
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