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S29WS-P Datasheet, PDF (68/89 Pages) SPANSION – 512/256/128 Mb (32/16/8 M x 16 bit) 1.8 V Burst Simultaneous Read/Write MirrorBit Flash Memory
Data Sheet (Advance Information)
11.8.2 Asynchronous Mode Read
Parameter
JEDEC
Standard
Description
Asynchronous
Unit
tCE
Access Time from CE# Low
Max
83
ns
tACC
Asynchronous Access Time
Max
80
ns
tAVDP
AVD# Low Time
Min
7.5
ns
tAAVDS
Address Setup Time to Rising Edge of AVD#
Min
6
ns
tAAVDH
Address Hold Time from Rising Edge of AVD#
Min
0
ns
tOE
Output Enable to Output Valid
Max
13.5
ns
Read
Min
0
ns
tOEH
Output Enable Hold
Time
Toggle and Data#
Polling
Min
4
ns
tOEZ
tCAS
tPACC
tCEZ
Output Enable to High Z
CE# Setup Time to AVD#
Intra Page Access Time
Chip Enable to High Z
Max
7.6
ns
Min
0
ns
Max
20
ns
Max
7.6
ns
Figure 11.9 Asynchronous Read Mode (AVD# Toggling - Case 1)
CLK
VIL or VIH
CE#
AVD#
OE#
WE#
DQ15-DQ0
Amax-A0
tWEA
tOEH
tAVDP
tOE
tCE
tAAVDS
VA
tAAVDH
tCR
RDY Hi-Z
Notes:
1. Valid Address and AVD# Transition occur before CE# is driven Low.
2. VA = Valid Read Address, RD = Read Data.
tCEZ
tOEZ
RD
tCEZ
Hi-Z
66
S29WS-P
S29WS-P_00_A7 November 8, 2006